New MOSFET architectures are presently being developed in which dielectrics with high permittivity are introduced to replace SiO2-based dielectrics, which are at the end of the scaling roadmap, and where also metal gates are used to replace poly-Si gate to avoid poly-depletion effects. Key in the success of this development is the electrical behavior of such high k/metal gate devices, and more specifically the Bias-Temperature- Instabilities, which are well-known reliability problems in MOS gat ...
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Bias-Temperature-Instabilities in MOSFETs with high-k dielectrics
Electrical behavior, modeling and process impact under Bias Temperature stress in high-k metal gated MOSFETs
Aoulaiche, Marc, Groeseneken, Guido, Maes, Herman
Kartoniert, 224 S.
Sprache: Englisch
220 mm
LAP Lambert Academic Publishing (2010)
Gewicht: 314 g
ISBN-13: 978-3-8383-6404-9
Titelnr.: 26546563